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    公开号:NL2005332A
    申请号:NL2005332
    申请日:2010-09-08
    公开日:2011-04-14
    发明作者:Leonardus Verstappen；Arie Boef
    申请人:Asml Netherlands Bv；
    IPC主号:
    专利说明:

    INSPECTION METHOD AND APPARATUSBACKGROUND
    Field of the Invention
    [0001] The present invention relates to methods of inspection and apparatus usable, forexample, in the manufacture of devices by lithographic techniques. The invention may beapplied for example to detect processing faults on semiconductor wafers arising duringprocessing by a lithographic apparatus.
    Background Art
    [0002] A lithographic apparatus is a machine that applies a desired pattern onto a substrate,usually onto a target portion of the substrate. A lithographic apparatus can be used, forexample, in the manufacture of integrated circuits (ICs). In that instance, a patterning device,which is alternatively referred to as a mask or a reticle, may be used to generate a circuitpattern to be formed on an individual layer of the IC. This pattern can be transferred onto atarget portion (e.g., comprising part of, one, or several dies) on a substrate (e.g., a siliconwafer). Transfer of the pattern is typically via imaging onto a layer of radiation-sensitive material(resist) provided on the substrate. In general, a single substrate will contain a network ofadjacent target portions that are successively patterned. Known lithographic apparatus includeso-called steppers, in which each target portion is irradiated by exposing an entire pattern ontothe target portion at one time, and so-called scanners, in which each target portion is irradiatedby scanning the pattern through a radiation beam in a given direction (the “scanning”-direction)while synchronously scanning the substrate parallel or anti-parallel to this direction. It is alsopossible to transfer the pattern from the patterning device to the substrate by imprinting thepattern onto the substrate.
    [0003] In order to monitor the lithographic process, it is necessary to measure parameters ofthe patterned substrate, for example the overlay error between successive layers formed in oron it. There are various techniques for making measurements of the microscopic structuresformed in lithographic processes, including the use of scanning electron microscopes andvarious specialized tools. One form of specialized inspection tool is a scatterometer in which abeam of radiation is directed onto a target on the surface of the substrate and properties of thescattered or reflected beam are measured. By comparing the properties of the beam beforeand after it has been reflected or scattered by the substrate, the properties of the substrate canbe determined. This can be done, for example, by comparing the reflected beam with data stored in a library of known measurements associated with known substrate properties. Twomain types of scatterometer are known. Spectroscopic scatterometers direct a broadbandradiation beam onto the substrate and measure the spectrum (intensity as a function ofwavelength) of the radiation scattered into a particular narrow angular range. Angularlyresolved scatterometers use a monochromatic radiation beam and measure the intensity of thescattered radiation as a function of angle.
    [0004] Two known approaches for inspecting a semiconductor wafer after processing by alithographic apparatus are: 1. Fast inspection for defects with dense sampling to look foranomalies on the wafer; and 2. Critical Dimension (CD) and Overlay (OV) metrology on a fewselected sites where a detailed (and therefore time consuming) measurement is done of theresist profile and the overlay.
    [0005] For Integrated Metrology (IM) of CD it would be preferable to measure all wafers in alot and cover as much wafer area as possible since this gives the highest chance of detectinglocalized process excursions, however the time spent performing such measurements needs tobe considered. Move Acquire Measure (MAM) time is a figure of merit for methods ofinspecting semiconductor wafers. The MAM time includes: time spent moving the waferbetween measurement sites; time spent aligning the measurement target to the inspectionapparatus at the measurement site; and time spent acquiring the measurement. MAM time forCD is of the order of 300 - 3000 ms at best (depending on the application) which is too long tomeasure all wafers in a lot with sufficient wafer coverage. This increases the chance of missingthe relevant locations on the wafer where large process excursions may be present.
    SUMMARY
    [0006] An embodiment of the present invention provides a method comprising the followingsteps. Illuminating a region of a substrate with a radiation beam. Detecting scattered radiationto obtain first scattering data. Comparing the first scattering data with second scattering data.Determining, based on the comparison, the presence of a fault of the substrate at the region.The illumination and the detection is performed along a scan path across a region, such thatthe first scattering data is spatially integrated over the region.
    [0007] Another embodiment of the present invention provides an inspection apparatuscomprising a radiation source, a detector, and a determining device. The radiation source isarranged to illuminate a region of a substrate with a radiation beam. The detector is arranged todetect scattered radiation to obtain first scattering data. The determining device is configured tocompare the first scattering data with second scattering data, and based on the comparison, to determine the presence of a fault of the substrate at the region. The illumination and thedetection is performed along a scan path across a region, such that the first scattering data isspatially integrated over the region.
    [0008] A further embodiment of the present invention provides an article of manufactureincluding a computer readable medium having instructions stored thereon that, executed ofwhich by a computing device, cause the computing device to perform operations comprisingthe following. Illuminating a region of a substrate with a radiation beam. Detecting scatteredradiation to obtain first scattering data. Comparing the first scattering data with secondscattering data. Determining, based on the comparison, the presence of a fault of the substrateat the region. The illumination and the detection is performed along a scan path across aregion, such that the first scattering data is spatially integrated over the region.
    [0009] Further features and advantages of the invention, as well as the structure andoperation of various embodiments of the invention, are described in detail below with referenceto the accompanying drawings. It is noted that the invention is not limited to the specificembodiments described herein. Such embodiments are presented herein for illustrativepurposes only. Additional embodiments will be apparent to persons skilled in the relevant art(s)based on the teachings contained herein.
    BRIEF DESCRIPTION OF THE DRAWINGS/FIGURES
    [0010] The accompanying drawings, which are incorporated herein and form part of thespecification, illustrate the present invention and, together with the description, further serve toexplain the principles of the invention and to enable a person skilled in the relevant art(s) tomake and use the invention.
    [0011] Figure 1 depicts a lithographic apparatus.
    [0012] Figure 2 depicts a lithographic cell or cluster.
    [0013] Figure 3 depicts a first scatterometer.
    [0014] Figure 4 depicts a second scatterometer.
    [0015] Figure 5 illustrates a scan path trajectory over a wafer and strips where acquisition isperformed on each die.
    [0016] Figure 6 illustrates a die with a measurement scan path and its measured spectrumbeing compared to a library of reference spectra with corresponding reference paths.
    [0017] Figure 7 is a flow chart of a method according to an embodiment of the presentinvention.
    [0018] Figure 8 depicts a computer assembly that may be used in apparatus according to anembodiment of the present invention.
    [0019] The features and advantages of the present invention will become more apparent fromthe detailed description set forth below when taken in conjunction with the drawings, in whichlike reference characters identify corresponding elements throughout. In the drawings, likereference numbers generally indicate identical, functionally similar, and/or structurally similarelements. The drawing in which an element first appears is indicated by the leftmost digit(s) inthe corresponding reference number.
    DETAILED DESCRIPTION
    [0020] This specification discloses one or more embodiments that incorporate the features ofthis invention. The disclosed embodiment(s) merely exemplify the invention. The scope of theinvention is not limited to the disclosed embodiment(s). The invention is defined by the clausesappended hereto.
    [0021] The embodiment(s) described, and references in the specification to "oneembodiment", "an embodiment", "an example embodiment", etc., indicate that theembodiment(s) described may include a particular feature, structure, or characteristic, butevery embodiment may not necessarily include the particular feature, structure, orcharacteristic. Moreover, such phrases are not necessarily referring to the same embodiment.Further, when a particular feature, structure, or characteristic is described in connection with anembodiment, it is understood that it is within the knowledge of one skilled in the art to effectsuch feature, structure, or characteristic in connection with other embodiments whether or notexplicitly described.
    [0022] Embodiments of the invention may be implemented in hardware, firmware, software, orany combination thereof. Embodiments of the invention may also be implemented asinstructions stored on a machine-readable medium, which may be read and executed by one ormore processors. A machine-readable medium may include any mechanism for storing ortransmitting information in a form readable by a machine (e.g., a computing device). Forexample, a machine-readable medium may include read only memory (ROM); random accessmemory (RAM); magnetic disk storage media; optical storage media; flash memory devices;electrical, optical, acoustical or other forms of propagated signals (e.g., carrier waves, infraredsignals, digital signals, etc.), and others. Further, firmware, software, routines, instructions maybe described herein as performing certain actions. However, it should be appreciated that suchdescriptions are merely for convenience and that such actions in fact result from computing devices, processors, controllers, or other devices executing the firmware, software, routines,instructions, etc.
    [0023] Before describing such embodiments in more detail, however, it is instructive topresent an example environment in which embodiments of the present invention may beimplemented.
    [0024] Figure 1 schematically depicts a lithographic apparatus. The apparatus comprises anillumination system (illuminator) IL configured to condition a radiation beam B (e.g., UVradiation or DUV radiation), a support structure (e.g., a mask table) MT constructed to supporta patterning device (e.g., a mask) MA and connected to a first positioner PM configured toaccurately position the patterning device in accordance with certain parameters, a substratetable (e.g., a wafer table) WT constructed to hold a substrate (e.g., a resist-mated wafer) Wand connected to a second positioner PW configured to accurately position the substrate inaccordance with certain parameters, and a projection system (e.g., a refractive projection lenssystem) PL configured to project a pattern imparted to the radiation beam B by patterningdevice MA onto a target portion C (e.g., comprising one or more dies) of the substrate W.
    [0025] The illumination system may include various types of optical components, such asrefractive, reflective, magnetic, electromagnetic, electrostatic or other types of opticalcomponents, or any combination thereof, for directing, shaping, or controlling radiation.
    [0026] The support structure supports, i.e., bears the weight of, the patterning device. It holdsthe patterning device in a manner that depends on the orientation of the patterning device, thedesign of the lithographic apparatus, and other conditions, such as for example whether or notthe patterning device is held in a vacuum environment. The support structure can usemechanical, vacuum, electrostatic or other clamping techniques to hold the patterning device.The support structure may be a frame or a table, for example, which may be fixed or movableas required. The support structure may ensure that the patterning device is at a desiredposition, for example with respect to the projection system. Any use of the terms “reticle” or“mask” herein may be considered synonymous with the more general term “patterning device.”
    [0027] The term “patterning device” used herein should be broadly interpreted as referring toany device that can be used to impart a radiation beam with a pattern in its cross-section suchas to create a pattern in a target portion of the substrate. It should be noted that the patternimparted to the radiation beam may not exactly correspond to the desired pattern in the targetportion of the substrate, for example if the pattern includes phase-shifting features or so calledassist features. Generally, the pattern imparted to the radiation beam will correspond to a particular functional layer in a device being created in the target portion, such as an integratedcircuit.
    [0028] The patterning device may be transmissive or reflective. Examples of patterningdevices include masks, programmable mirror arrays, and programmable LCD panels. Masksare well known in lithography, and include mask types such as binary, alternating phase-shift,and attenuated phase-shift, as well as various hybrid mask types. An example of aprogrammable mirror array employs a matrix arrangement of small mirrors, each of which canbe individually tilted so as to reflect an incoming radiation beam in different directions. Thetilted mirrors impart a pattern in a radiation beam, which is reflected by the mirror matrix. Thepatterning device may be transmissive or reflective. Examples of patterning devices includemasks, programmable mirror arrays, and programmable LCD panels. Masks are well known inlithography, and include mask types such as binary, alternating phase-shift, and attenuatedphase-shift, as well as various hybrid mask types. An example of a programmable mirror arrayemploys a matrix arrangement of small mirrors, each of which can be individually tilted so as toreflect an incoming radiation beam in different directions. The tilted mirrors impart a pattern ina radiation beam, which is reflected by the mirror matrix.
    [0029] The term “projection system” used herein should be broadly interpreted asencompassing any type of projection system, including refractive, reflective, catadioptric,magnetic, electromagnetic and electrostatic optical systems, or any combination thereof, asappropriate for the exposure radiation being used, or for other factors such as the use of animmersion liquid or the use of a vacuum. Any use of the term “projection lens” herein may beconsidered as synonymous with the more general term “projection system”.
    [0030] As here depicted, the apparatus is of a transmissive type (e.g., employing atransmissive mask). Alternatively, the apparatus may be of a reflective type (e.g., employing aprogrammable mirror array of a type as referred to above, or employing a reflective mask).
    [0031] The lithographic apparatus may be of a type having two (dual stage) or more substratetables (and/or two or more mask tables). In such “multiple stage” machines the additionaltables may be used in parallel, or preparatory steps may be carried out on one or more tableswhile one or more other tables are being used for exposure.
    [0032] The lithographic apparatus may also be of a type wherein at least a portion of thesubstrate may be covered by a liquid having a relatively high refractive index, e.g., water, so asto fill a space between the projection system and the substrate. An immersion liquid may alsobe applied to other spaces in the lithographic apparatus, for example, between the mask andthe projection system. Immersion techniques are well known in the art for increasing the numerical aperture of projection systems. The term “immersion” as used herein does not meanthat a structure, such as a substrate, must be submerged in liquid, but rather only means thatliquid is located between the projection system and the substrate during exposure.
    [0033] Referring to Figure 1, the illuminator IL receives a radiation beam from a radiationsource SO. The source and the lithographic apparatus may be separate entities, for examplewhen the source is an excimer laser. In such cases, the source is not considered to form part ofthe lithographic apparatus and the radiation beam is passed from the source SO to theilluminator IL with the aid of a beam delivery system BD comprising, for example, suitabledirecting mirrors and/or a beam expander. In other cases the source may be an integral part ofthe lithographic apparatus, for example when the source is a mercury lamp. The source SOand the illuminator IL, together with the beam delivery system BD if required, may be referredto as a radiation system.
    [0034] The illuminator IL may comprise an adjuster AD for adjusting the angular intensitydistribution of the radiation beam. Generally, at least the outer and/or inner radial extent(commonly referred to as σ-outer and σ-inner, respectively) of the intensity distribution in apupil plane of the illuminator can be adjusted. In addition, the illuminator IL may comprisevarious other components, such as an integrator IN and a condenser CO. The illuminator maybe used to condition the radiation beam, to have a desired uniformity and intensity distributionin its cross-section.
    [0035] The radiation beam B is incident on the patterning device (e.g., mask MA), which isheld on the support structure (e.g., mask table MT), and is patterned by the patterning device.Having traversed the mask MA, the radiation beam B passes through the projection system PL,which focuses the beam onto a target portion C of the substrate W. With the aid of the secondpositioner PW and position sensor IF (e.g., an interferometric device, linear encoder, 2-Dencoder or capacitive sensor), the substrate table WT can be moved accurately, e.g., so as toposition different target portions C in the path of the radiation beam B. Similarly, the firstpositioner PM and another position sensor (which is not explicitly depicted in Figure 1) can beused to accurately position the mask MA with respect to the path of the radiation beam B, e.g.,after mechanical retrieval from a mask library, or during a scan. In general, movement of themask table MT may be realized with the aid of a long-stroke module (coarse positioning) and ashort-stroke module (fine positioning), which form part of the first positioner PM. Similarly,movement of the substrate table WT may be realized using a long-stroke module and a short-stroke module, which form part of the second positioner PW. In the case of a stepper (asopposed to a scanner) the mask table MT may be connected to a short-stroke actuator only, or may be fixed. Mask MA and substrate W may be aligned using mask alignment marks M1, M2and substrate alignment marks P1, P2. Although the substrate alignment marks as illustratedoccupy dedicated target portions, they may be located in spaces between target portions(these are known as scribe-lane alignment marks). Similarly, in situations in which more thanone die is provided on the mask MA, the mask alignment marks may be located between thedies.
    [0036] The depicted apparatus could be used in at least one of the following modes:
    [0037] 1. In step mode, the mask table MT and the substrate table WT are kept essentiallystationary, while an entire pattern imparted to the radiation beam is projected onto a targetportion C at one time (i.e., a single static exposure). The substrate table WT is then shifted inthe X and/or Y direction so that a different target portion C can be exposed. In step mode, themaximum size of the exposure field limits the size of the target portion C imaged in a singlestatic exposure.
    [0038] 2. In scan mode, the mask table MT and the substrate table WT are scannedsynchronously while a pattern imparted to the radiation beam is projected onto a target portionC (i.e., a single dynamic exposure). The velocity and direction of the substrate table WTrelative to the mask table MT may be determined by the (de-)magnification and image reversalcharacteristics of the projection system PL. In scan mode, the maximum size of the exposurefield limits the width (in the non-scanning direction) of the target portion in a single dynamicexposure, whereas the length of the scanning motion determines the height (in the scanningdirection) of the target portion.
    [0039] 3. In another mode, the mask table MT is kept essentially stationary holding aprogrammable patterning device, and the substrate table WT is moved or scanned while apattern imparted to the radiation beam is projected onto a target portion C. In this mode,generally a pulsed radiation source is employed and the programmable patterning device isupdated as required after each movement of the substrate table WT or in between successiveradiation pulses during a scan. This mode of operation can be readily applied to masklesslithography that utilizes programmable patterning device, such as a programmable mirror arrayof a type as referred to above.
    [0040] Combinations and/or variations on the above described modes of use or entirelydifferent modes of use may also be employed.
    [0041] As shown in Figure 2, the lithographic apparatus LA forms part of a lithographic cellLC, also sometimes referred to a lithocell or cluster, which also includes apparatus to performpre- and post-exposure processes on a substrate. Conventionally these include spin coaters SC to deposit resist layers, developers DE to develop exposed resist, chill plates CH and bakeplates BK. A substrate handler, or robot, RO picks up substrates from input/output ports 1/01,I/02, moves them between the different process apparatus and delivers then to the loading bayLB of the lithographic apparatus. These devices, which are often collectively referred to as thetrack, are under the control of a track control unit TCU which is itself controlled by thesupervisory control system SCS, which also controls the lithographic apparatus via lithographycontrol unit LACU. Thus, the different apparatus can be operated to maximize throughput andprocessing efficiency.
    [0042] In order that the substrates that are exposed by the lithographic apparatus areexposed correctly and consistently, it is desirable to inspect exposed substrates to measureproperties such as overlay errors between subsequent layers, line thicknesses, criticaldimensions (CD), etc. If errors are detected, adjustments may be made to exposures ofsubsequent substrates, especially if the inspection can be done soon and fast enough thatother substrates of the same batch are still to be exposed. Also, already exposed substratesmay be stripped and reworked - to improve yield - or discarded, thereby avoiding performingexposures on substrates that are known to be faulty. In a case where only some targetportions of a substrate are faulty, further exposures can be performed only on those targetportions which are good.
    [0043] An inspection apparatus is used to determine the properties of the substrates, and inparticular, how the properties of different substrates or different layers of the same substratevary from layer to layer. The inspection apparatus may be integrated into the lithographicapparatus LA or the lithocell LC or may be a stand-alone device. To enable most rapidmeasurements, it is desirable that the inspection apparatus measure properties in the exposedresist layer immediately after the exposure. However, the latent image in the resist has a verylow contrast - there is only a very small difference in refractive index between the parts of theresist which have been exposed to radiation and those which have not - and not all inspectionapparatus have sufficient sensitivity to make useful measurements of the latent image.Therefore measurements may be taken after the post-exposure bake step (PEB) which iscustomarily the first step carried out on exposed substrates and increases the contrast betweenexposed and unexposed parts of the resist. At this stage, the image in the resist may bereferred to as semi-latent. It is also possible to make measurements of the developed resistimage - at which point either the exposed or unexposed parts of the resist have been removed- or after a pattern transfer step such as etching. The latter possibility limits the possibilities forrework of faulty substrates but may still provide useful information.
    [0044] Figure 3 depicts a scatterometer which may be used in the present invention. Itcomprises a broadband (white light) radiation projector 2 which projects radiation onto asubstrate W during a relative motion between the substrate W and the scatterometer 2, 4, themotion being controlled by the processing unit PU. The reflected radiation is passed to aspectrometer detector 4, which measures a spectrum 10 (intensity as a function of wavelength)of the specular reflected radiation. This measured data is spatially integrated along the path ofmotion during the measurement of the spectrum. From this data, the presence of faults in thestructure or profile giving rise to the detected spectrum may be determined by comparison ofthe detected spectrum with a library of simulated spectra as shown at the bottom of Figure 3.Such a scatterometer may be configured as a normal-incidence scatterometer or an oblique-incidence scatterometer.
    [0045] Another scatterometer that may be used with the present invention is shown in Figure4. In this device SM2, the radiation emitted by radiation source 2 is collimated using lenssystem 12 and transmitted through interference filter 13 and polarizer 17, reflected by partiallyreflected surface 16 and is focused onto substrate W via a microscope objective lens 15, whichhas a high numerical aperture (NA), preferably at least 0.9 and more preferably at least 0.95.Immersion scatterometers may even have lenses with numerical apertures over 1. Thereflected radiation then transmits through partially reflective surface 16 into a detector 18 inorder to have the scatter spectrum detected. The detector may be located in the back-projected pupil plane 11, which is at the focal length of the lens system 15, however the pupilplane may instead be re-imaged with auxiliary optics (not shown) onto the detector. The pupilplane is the plane in which the radial position of radiation defines the angle of incidence and theangular position defines azimuth angle of the radiation. The detector is preferably a two-dimensional detector so that a two-dimensional angular scatter spectrum of a substrate target30 can be measured. The detector 18 may be, for example, an array of CCD or CMOSsensors, and may use an integration time of, for example, 40 milliseconds per frame.
    [0046] A reference beam is often used for example to measure the intensity of the incidentradiation. To do this, when the radiation beam is incident on the beam splitter 16 part of it istransmitted through the beam splitter as a reference beam towards a reference mirror 14. Thereference beam is then projected onto a different part of the same detector 18.
    [0047] A set of interference filters 13 is available to select a wavelength of interest in therange of, say, 405 - 790 nm or even lower, such as 200 - 300 nm. The interference filter maybe tunable rather than comprising a set of different filters. A grating could be used instead ofinterference filters.
    [0048] The detector 18 may measure the intensity of scattered light at a single wavelength (ornarrow wavelength range), the intensity separately at multiple wavelengths or integrated over awavelength range. Furthermore, the detector may separately measure the intensity oftransverse magnetic- and transverse electric-polarized light and/or the phase differencebetween the transverse magnetic- and transverse electric-polarized light.
    [0049] Using a broadband light source (i.e., one with a wide range of light frequencies orwavelengths - and therefore of colors) is possible, which gives a large etendue, allowing themixing of multiple wavelengths. The plurality of wavelengths in the broadband preferably eachhas a bandwidth of Δλ and a spacing of at least 2 Δλ (i.e., twice the bandwidth). Several“sources” of radiation can be different portions of an extended radiation source which havebeen split using fiber bundles. In this way, angle resolved scatter spectra can be measured atmultiple wavelengths in parallel. A 3-D spectrum (wavelength and two different angles) can bemeasured, which contains more information than a 2-D spectrum. This allows more informationto be measured which increases metrology process robustness. This is described in moredetail in EP1,628,164A, which is incorporate by reference herein in its entirety.
    [0050] The processing unit PU controls a relative movement between the substrate W and thescatterometer SM2. The movement is controlled by the processing unit PU controlling motion ofa wafer table or stage WT2 on which the substrate wafer W is located, using a wafer tableactuator TA. The wafer table may be moved in X and Y directions independently.
    [0051] The target pattern 30 on substrate W may be a strip of product pattern. The targetpattern 30 may comprise a grating, which is printed such that after development, the bars areformed of solid resist lines. This pattern is sensitive to chromatic aberrations in the lithographicprojection apparatus, particularly the projection system PL, and illumination symmetry and thepresence of such aberrations will manifest themselves in a variation in the printed grating. Thetarget pattern may alternatively be etched into the substrate, which is sensitive to processvariations such as in the etching apparatus. The scatterometry data of the printed target patternis used to detect faults in the pattern as described below.
    [0052] With reference to Figure 5, in one embodiment of the present invention, themeasurement spot of a radiation beam is scanned across the wafer substrate 502 in a scanpath trajectory 504 comprising large (constant) velocity portions and the acquisition of anangle-resolved spectrum is taken at full scan speed. As a result, the measured spectrum isspatially integrated over the time-varying spectrum that occurs during the image acquisition.For example, if the scan speed is 1 m/s and the acquisition time is only 4 ms then the spottravels a distance of 4 mm. If the dies are 6 mm apart then the camera needs a frame rate of 1000 mm.s-1/6 mm « 150 fps which is challenging but feasible with current image sensortechnology. In principle, the image acquisition can also be done in a step-and-scan fashion butthis is probably not a preferred embodiment due to the risk of inducing vibrations. Figure 5shows, by way of example, the scan path trajectory 504 and the strips 506 where the imageacquisition takes place (thick bars) The strips 506 are not to scale in Figure 5. The width of astrip will be determined by the size of the part of the measurement spot over which spectrumdata is gathered. This is typically 25 pm or less. The target pattern structures being inspectedare a strip 506 in each die 508, with die arranged in a group 510 according to the reticle.
    [0053] The structure to be inspected is typically periodic in the X and Y direction (like NANDflash). If a long acquisition is performed along a strip across the structure in the Y direction thenY position variation in the start and end positions of the strip have a relatively small effect onthe acquired spatially integrated spectrum. Variation in the acquired spectrum resulting fromspot position variation will primarily depend on the X position of the spot. Spot position variationwill occur because no alignment of the spot to the wafer is performed along the high-speedscan path trajectory. X is horizontal and Y is vertical in the drawings.
    [0054] With reference to Figure 6, a measured spectrum 602 of a strip 603 on a die 604 isacquired on a measurement scan path 606 of a moving measurement spot 607. Themeasured spectrum 602 is compared 608 with a set 61A to 61F of reference spectra that arestored in a library. These reference spectra 61A to 61F have been obtained for a range of scanpaths 60A to 60F at respective X-positions on the die to allow for variation in the X position ofthe high-speed measurement spot. Although six reference scan paths are shown in Figure 6, inpractice a larger number may be used, such as 35, as discussed below. The reference spectramay be obtained either by computation from a model of the as-designed die or bymeasurement of one or more known good die on a reference wafer. Thus there is at least onereference spectrum per X position. The sampling distance along the X-direction is muchsmaller than the spot diameter and is approximately of the order of 1 μηι. The X-range is atleast the spot diameter plus the peak-to-peak wafer position uncertainty. The wafer positionuncertainty is of the order of 10 μηι and the spot diameter is of the order of 25 μητι so in thisexample embodiment there is a library of only 35 entries (although only six are shown in Figure6) which is quite reasonable with respect to computation and storage requirements.
    [0055] In order to cope with normal processing variations over the wafer this approach may beextended by making a separate library for multiple dies on the wafer. In its extreme form it ispossible to make a library for every die on the wafer.
    [0056] The comparison of the measured spectrum 602 with all the library entries 61A to 61Fyields a good match 608 according to certain criteria like Goodness of Fit or mean-squarederror, with library entry 61C. In the event of the die having a fault, resulting in anothermeasured spectrum 610, then there is no spectrum in the library that meets the matchingcriteria and there is no match 612. In that case it is determined that that the die is suspect andthat it may have experienced a processing error resulting in the fault.
    [0057] With reference to Figure 7, a flowchart 702 is shown illustrating an embodiment of thepresent invention that is an inspection method for detecting a fault on a substrate. Undercontrol of the processing unit PU (in Figures 3 and 4), the wafer stage (WT2 in Figure 4) beginsmoving 704 according to the predetermined scan trajectory. The scan trajectory is set up topass over at least part of one or more selected dies on the wafer. The light source 2 is switchedon when passing over the predetermined strip of each die to illuminate 706 the strip on thesurface of the substrate with the radiation beam. Thus the illumination 706 and detection 708 isperformed along a scan path crossing the strip region. By detecting scattered radiation alongthe strip scattering/diffraction data is obtained or acquired 708 at each selected die, in the formof a spatially integrated or averaged angle resolved spectrum. The scan path is preferablylinear along the strip, although non-linear paths or strips may also be used. The strip is typicallyin line with the edge a die, to match the orientation of the pattern on the die, however, otherorientations may be used in order to match the layout of the product pattern on the die. Thelocation of the strips are predetermined and selected to measure suitable structures on the die.Such structures may have periodic or grating-like features with a periodicity perpendicular tothe scan path. On a die there may be more than one strip along the scan path trajectorycorresponding to the location of such suitable structures. This may be achieved by breaking upthe strip by switching the beam and/or detector on and off repeatedly.
    [0058] Each acquired spectrum is compared 710 with one or more measured or calculatedreference spectrum for that die. This may be done for a library of reference spectracorresponding to a range of positions, perpendicular to the relative motion’s direction, spanninga distance calculated as the position’s uncertainty plus the size of the radiation beam. Basedon the comparison 710 the presence of a fault of the wafer at the strip is determined 712 andthe result stored. This determination 712 may overlap in time with some or all of the movementto the next die. Furthermore, the determination 712 may overlap in time with some or all of theillumination 706 and acquisition 708 of the next die.
    [0059] Alternatively (as shown by the dotted lines), the acquired spectrum is stored 714 forlater analysis, or the analysis is done in parallel with the acquisition and movement, forexample by a different processor.
    [0060] If the wafer is not finished 716, then the scanning trajectory continues to anotheracquisition site, otherwise the scan trajectory ends 718. If the comparison and determiningsteps 710 and 712 have not been done, then the comparison of each acquired spectrum,stored in step 714, may be performed in a batch 720 against the library. If the wafer isdetermined 724 to be suspect because of a poor match then a more detailed measurement canbe done 726 on one or more of the metrology targets in the neighborhood of a suspect die, forexample in the adjacent scribe lane.
    [0061] The handling of the measured spectra including logging, charting, alerting and decisionmaking about further measurements may be performed using methods known to one skilled inthe art for handling other metrology data, such as critical dimensions (CDs).
    [0062] However, unlike conventional sampled CD measurements, the present invention offerslarge wafer coverage for all wafers in a lot and this maximizes the chance to detect localizedwafer excursions. This results in a more robust early fault detection. The present invention issuited for use in scatterometry inspection apparatus that uses fast balance-mass stages thatcan move the wafer at high speed with respect to the radiation beam.
    [0063] The method according to the present invention may be implemented under the controlof a computer program, running on a processor. It should be understood that the processorrunning the computer program to implement the methods in the previous embodiments may bea computer assembly 60 as shown in Figure 8. The computer assembly 60 may be a dedicatedcomputer in the form of a processing unit PU in embodiments of the assembly according to theinvention or, alternatively, for example, be a central computer controlling the lithographicprojection apparatus. The computer assembly 60 may be arranged for loading a computerprogram product comprising computer executable code. This may enable the computerassembly 60, when the computer program product is downloaded, to control aforementioneduses of a lithographic apparatus with embodiments of the image sensor.
    [0064] The memory 29 connected to processor 27 may comprise a number of memorycomponents like a hard disk 61, Read Only Memory (ROM) 62, Electrically ErasableProgrammable Read Only Memory (EEPROM) 63 en Random Access Memory (RAM) 64. Notall aforementioned memory components need to be present. Furthermore, it is not essentialthat aforementioned memory components are physically in close proximity to the processor 27or to each other. They may be located at a distance away.
    [0065] The processor 27 may also be connected to some kind of user interface, for instance akeyboard 65 or a mouse 66. A touch screen, track ball, speech converter or other interfacesthat are known to persons skilled in the art may also be used.
    [0066] The processor 27 may be connected to a reading unit 67, which is arranged to readdata, e.g., in the form of computer executable code, from and under some circumstances storedata on a data carrier, like a floppy disc 68 or a CDROM 69. Also DVD’s or other data carriersknown to persons skilled in the art may be used.
    [0067] The processor 27 may also be connected to a printer 70 to print out output data onpaper as well as to a display 71, for instance a monitor or LCD (Liquid Crystal Display), of anyother type of display known to a person skilled in the art.
    [0068] The processor 27 may be connected to a communications network 72, for instance apublic switched telephone network (PSTN), a local area network (LAN), a wide area network(WAN) etc. by means of transmitters/receivers 73 responsible for input/output (I/O). Theprocessor 27 may be arranged to communicate with other communication systems via thecommunications network 72. In an embodiment of the invention external computers (notshown), for instance personal computers of operators, can log into the processor 27 via thecommunications network 72.
    [0069] The processor 27 may be implemented as an independent system or as a number ofprocessing units that operate in parallel, wherein each processing unit is arranged to executesub-tasks of a larger program. The processing units may also be divided in one or more mainprocessing units with several subprocessing units. Some processing units of the processor 27may even be located a distance away of the other processing units and communicate viacommunications network 72.
    [0070] Although specific reference may be made in this text to the use of inspection methodsand apparatus in the manufacture of ICs, it should be understood that the inspection methodsand apparatus described herein may have other applications, such as determining faults in themanufacture of integrated optical systems, guidance and detection patterns for magneticdomain memories, flat-panel displays, liquid-crystal displays (LCDs), reticles, thin film magneticheads, etc. The skilled artisan will appreciate that, in the context of such alternativeapplications, any use of the terms “wafer” or “die” herein may be considered as synonymouswith the more general terms “substrate” or “target portion", respectively. The substrate referredto herein may be processed, before or after exposure, in for example a track (a tool thattypically applies a layer of resist to a substrate and develops the exposed resist), a metrologytool and/or an inspection tool. Where applicable, the disclosure herein may be applied to such and other substrate processing tools. Further, the substrate may be processed more than once,for example in order to create a multi-layer 1C, so that the term substrate used herein may alsorefer to a substrate that already contains multiple processed layers.
    [0071] Although specific reference may have been made above to the use of embodiments ofthe invention in the context of optical lithography, it will be appreciated that the invention maybe used in other applications, for example imprint lithography, and where the context allows, isnot limited to optical lithography. In imprint lithography a topography in a patterning devicedefines the pattern created on a substrate. The topography of the patterning device may bepressed into a layer of resist supplied to the substrate whereupon the resist is cured byapplying electromagnetic radiation, heat, pressure or a combination thereof. The patterningdevice is moved out of the resist leaving a pattern in it after the resist is cured.
    [0072] The terms “radiation” and “beam” used herein encompass all types of electromagneticradiation, including ultraviolet (UV) radiation (e.g., having a wavelength of or about 365, 355,248,193,157 or 126 nm) and extreme ultra-violet (EUV) radiation (e.g., having a wavelength inthe range of 5-20 nm), as well as particle beams, such as ion beams or electron beams.
    [0073] The term “lens”, where the context allows, may refer to any one or combination ofvarious types of optical components, including refractive, reflective, magnetic, electromagneticand electrostatic optical components.
    [0074] While specific embodiments of the invention have been described above, it will beappreciated that the invention may be practiced otherwise than as described. For example, theinvention may take the form of a computer program containing one or more sequences ofmachine-readable instructions describing a method as disclosed above, or a data storagemedium (e.g., semiconductor memory, magnetic or optical disk) having such a computerprogram stored therein.
    Conclusion
    [0075] It is to be appreciated that the Detailed Description section, and not the Summary andAbstract sections, is intended to be used to interpret the clauses. The Summary and Abstractsections may set forth one or more but not all exemplary embodiments of the present inventionas contemplated by the inventor(s), and thus, are not intended to limit the present invention andthe appended clauses in any way.
    [0076] The present invention has been described above with the aid of functional buildingblocks illustrating the implementation of specified functions and relationships thereof. Theboundaries of these functional building blocks have been arbitrarily defined herein for the convenience of the description. Alternate boundaries can be defined so long as the specifiedfunctions and relationships thereof are appropriately performed.
    [0077] The foregoing description of the specific embodiments will so fully reveal the generalnature of the invention that others can, by applying knowledge within the skill of the art, readilymodify and/or adapt for various applications such specific embodiments, without undueexperimentation, without departing from the general concept of the present invention.Therefore, such adaptations and modifications are intended to be within the meaning andrange of equivalents of the disclosed embodiments, based on the teaching and guidancepresented herein. It is to be understood that the phraseology or terminology herein is for thepurpose of description and not of limitation, such that the terminology or phraseology of thepresent specification is to be interpreted by the skilled artisan in light of the teachings andguidance.
    [0078] The breadth and scope of the present invention should not be limited by any of theabove-described exemplary embodiments, but should be defined only in accordance with thefollowing clauses and their equivalents. Other aspects of the invention are set out as in thefollowing numbered clauses: 1. A method of inspection of a substrate, the method comprising the steps: (a) illuminating a region of the substrate with a radiation beam and detecting scatteredradiation to obtain first scattering data; (b) comparing the first scattering data with second scattering data; and (c) based on the comparison determining the presence of a fault of the substrate at theregion, wherein the illumination and detection (a) is performed along a scan path across the regionthereby obtaining first scattering data that is spatially integrated over the region.
    2. A method of inspection according to clause 1, wherein the region comprises a strip.
    3. A method of inspection according to clause 1 or clause 2, wherein the first and secondscattering data comprise diffraction spectra.
    4. A method of inspection according to clause 1 or clause 2, wherein the first and secondscattering data comprise diffraction spectra.
    5. A method of inspection according to clause 3, wherein the diffraction spectra are angleresolved.
    6. A method of inspection according to any previous clause, wherein the secondscattering data is obtained by measurement of a reference region of a substrate.
    7. A method of inspection according clause 5, wherein the reference region is a strip.
    8. A method of inspection according to any of clauses 1 to 4, wherein the secondscattering data is obtained by calculation from a model of a reference region.
    9. A method of inspection according to clause 7, wherein the reference region is a strip.
    10. A method of inspection according to any previous clause, wherein the secondscattering data comprises a library of scattering data.
    11. A method of inspection according to any previous clause, wherein the a librarycomprises scattering data for a range of positions perpendicular to the scan path’s direction.
    12. A method of inspection according to clause 10, wherein the range of positionsperpendicular to the scan path’s direction spans a distance calculated using a positionuncertainty of the radiation beam and a size of the radiation beam.
    13. An inspection apparatus for inspection of a substrate, the inspection apparatuscomprising: (a) a radiation source arranged to illuminate a region of the substrate with a radiationbeam (b) a detector arranged to detect scattered radiation to obtain first scattering data; (c) at least one processor configured to compare the first scattering data with secondscattering data and based on the comparison to determine the presence of a fault of thesubstrate at the region, wherein the illumination and detection (a) is performed along a scan path across the regionthereby obtaining first scattering data that is spatially integrated over the region.
    14. An inspection apparatus according to clause 12, wherein the region comprises a strip.
    15. An inspection apparatus according to clause 12 or clause 13, wherein the first andsecond scattering data comprise diffraction spectra.
    16. An inspection apparatus according to clause 14, wherein the diffraction spectra areangle resolved.
    17. An inspection apparatus according to any of clauses 12 to 15, wherein the secondscattering data is obtained by measurement of a reference region of a substrate.
    18. An inspection apparatus according clause 16, wherein the reference region is a strip.
    19. An inspection apparatus according to any of clauses 12 to 15, wherein the secondscattering data is obtained by calculation from a model of a reference region.
    20. An inspection apparatus according to clause 18, wherein the reference region is a strip.
    21 An inspection apparatus according to any of clauses 12 to 19, wherein the secondscattering data comprises a library of scattering data.
    22. An inspection apparatus according to any of clauses 12 to 20, wherein the a librarycomprises scattering data for a range of positions perpendicular to the scan path’s direction.
    23. An inspection apparatus according to clause 21, wherein the range of positionsperpendicular to the scan path’s direction spans a distance calculated using a positionuncertainty of the radiation beam and a size of the radiation beam.
    24. A computer program product containing one or more sequences of machine-readableinstructions for inspection of a substrate, the instructions being adapted to cause one or moreprocessors to: (a) control illuminating of a region of the substrate with a radiation beam and detecting ofscattered radiation to obtain first scattering data; (b) compare the first scattering data with second scattering data; and (c) based on the comparison determining the presence of a fault of the substrate at theregion, wherein the illumination and detection (a) is performed along a scan path across the regionthereby obtaining first scattering data that is spatially integrated over the region 25. A method comprising: illuminating a region of a substrate with a radiation beam; detecting scattered radiation to obtain first scattering data; comparing the first scattering data with second scattering data; and determining, based on the comparison, the presence of a fault of the substrate at the region, wherein the illumination and the detection is performed along a scan path across a region, such that the first scattering data is spatially integrated over the region.
    26. The method of inspection according to clause 25, wherein the region comprises a strip.
    27. The method of inspection according to clause 25, wherein the first and second scattering data comprise diffraction spectra.
    28. The method of inspection according to clause 27, wherein the diffraction spectra areangle resolved.
    29. The method of inspection according to clause 25, wherein the second scattering datais obtained by measurement of a reference region of a substrate.
    30. The method of inspection according clause 29, wherein the reference region is a strip.
    31. The method of inspection according to clause 25, wherein the second scattering data is obtained by calculation from a model of a reference region.
    32. The method of inspection according to clause 31, wherein the reference region is astrip.
    33. The method of inspection according to clause 25, wherein the second scattering datacomprises a library of scattering data.
    34. The method of inspection according to clause 33, wherein the library comprisesscattering data for a range of positions perpendicular to a direction of the scan path.
    35. The method of inspection according to clause 34, wherein the range of positionsperpendicular to the direction of the scan path spans a distance calculated using a positionuncertainty of the radiation beam and a size of the radiation beam.
    36. An inspection apparatus comprising: a radiation source arranged to illuminate a region of a substrate with a radiation beam;a detector arranged to detect scattered radiation to obtain first scattering data; anda determining device configured to compare the first scattering data with second scatteringdata, and based on the comparison, to determine the presence of a fault of the substrate at theregion, wherein the illumination and the detection is performed along a scan path across a region, suchthat the first scattering data is spatially integrated over the region.
    37. The inspection apparatus according to clause 36, wherein the region comprises a strip.
    38. The inspection apparatus according to clause 36, wherein the first and second scattering data comprise diffraction spectra.
    39. The inspection apparatus according to clause 38, wherein the diffraction spectra areangle resolved.
    40. The inspection apparatus according to clause 36, wherein the second scattering datais obtained by measurement of a reference region of a substrate.
    41. The inspection apparatus according clause 40, wherein the reference region is a strip.
    42. The inspection apparatus according to clause 36, wherein the second scattering data is obtained by calculation from a model of a reference region.
    43. The inspection apparatus according to clause 42, wherein the reference region is astrip.
    44. The inspection apparatus according to clause 36, wherein the second scattering datacomprises a library of scattering data.
    45. The inspection apparatus according to clause 44, wherein the library comprisesscattering data for a range of positions perpendicular to a direction of the scan path.
    46. The inspection apparatus according to clause 45, wherein the range of positionsperpendicular to the direction of the scan path spans a distance calculated using a positionuncertainty of the radiation beam and a size of the radiation beam.
    47. An article of manufacture including a computer readable medium having instructionsstored thereon that, executed of which by a computing device, cause the computing device toperform operations comprising: illuminating a region of a substrate with a radiation beam; detecting scattered radiation to obtain first scattering data; comparing the first scattering data with second scattering data; and determining, based on the comparison, the presence of a fault of the substrate at the region, wherein the illumination and the detection is performed along a scan path across a region, such that the first scattering data is spatially integrated over the region.
    权利要求:
    Claims (1)
    [1]
    A lithography device comprising: an exposure device adapted to provide a radiation beam; a support constructed to support a patterning device, the patterning device being capable of applying a pattern in a cross-section of the radiation beam to form a patterned radiation beam; a substrate table constructed to support a substrate; and a projection device adapted to project the patterned radiation beam onto a target area of the substrate, characterized in that the substrate table is adapted to position the target area of the substrate in a focal plane of the projection device.
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    法律状态:
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    US25103109|2009-10-13|
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